IPD50R380CEAUMA1 MOSFET Power
Electronics Ultra Low RDS on High Power and High Reliability
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
Description:
The IPD50R380CEAUMA1 is a N-Channel MOSFET from Infineon Technologies. This device is designed for applications requiring high voltage and fast switching. This device is designed to provide low on-resistance, low gate charge, and high current capabilities.
Features:
• Low on-resistance: RDS(on) = 0.37Ω
• Low gate charge: Qg = 3.2nC
• High current handling: Id = 38A
• High voltage capability: Vds = 500V
• Pin compatible with standard packages
• RoHS compliant
• Halogen Free
• MSL 2
• Lead free
• ESD protection
• AEC-Q101 qualified
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Service >>>
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IPD50R380CEAUMA1 MOSFET Power Electronics Ultra Low RDS On High Power And High Reliability Images
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