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IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262

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IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262

Brand Name : Infineon

Model Number : IRFSL5615PBF

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 150 V

Current - Continuous Drain (Id) @ 25°C : 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 42mOhm @ 21A, 10V

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IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
42mOhm @ 21A, 10V
Vgs(th) (Max) @ Id
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1750 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
144W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA

Features
• Key Parameters Optimized for Class-D Audio
Amplifier Applications
• Low RDSON for Improved Efficiency
• Low QG and QSW for Better THD and Improved


Efficiency
• Low QRR for Better THD and Lower EMI
• 175°C Operating Junction Temperature for


Ruggedness
• Can Deliver up to 300W per Channel into 4Ω Load in
Half-Bridge Configuration Amplifier

Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.

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How to buy >>>
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Service >>>
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• We are committed to providing fast, convenient and safe transportation service to global buyer.

IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262


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