Sign In | Join Free | My ecer.jp |
|
Brand Name : Infineon
Model Number : IPD053N08N3GATMA1
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80 V
Current - Continuous Drain (Id) @ 25°C : 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 5.3mOhm @ 90A, 10V
IPD053N08N3GATMA1 MOSFET Power Electronics N-Channel OptiMOS® 3 Power-Transistor Package PG-TO252-3
ET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 5.3mOhm @ 90A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 90µA | |
Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 40 V | |
FET Feature | - | |
Power Dissipation (Max) | 150W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | PG-TO252-3 | |
Package / Case |
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
![]() |
IPD053N08N3GATMA1 MOSFET Power Electronics N-Channel OptiMOS® 3 Power-Transistor Package PG-TO252-3 Images |