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Brand Name : onsemi
Model Number : FDS3692
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 100 V
Current - Continuous Drain (Id) @ 25°C : 4.5A (Ta)
Rds On (Max) @ Id, Vgs : 60mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15 nC @ 10 V
Vgs (Max) : ±20V
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 60mOhm @ 4.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 746 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-SOIC | |
Package / Case |
Product Listing:
FDS3692, N-Channel PowerTrench MOSFET, ON Semiconductor
• Drain-Source Voltage (VDS): -100V
• Drain-Source On-state Resistance (RDS(on)): 0.0045 Ohm
• Continuous Drain Current (ID): 30A
• Power Dissipation (PD): 10W
• Operating and Storage Temperature Range (TJ and TSTG): -55°C to +150°C
• Gate-Source Voltage (VGS): ±20V
• Gate Charge (Qg): 25nC
• Total Gate Charge (Qgs): 11nC
• Total Gate-Source Charge (Qgd): 14nC
• Total Capacitance (Ciss): 990pF
• Pulsed Drain Current (IDM): 60A
• Mounting Type: SMD
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FDS3692 N-Channel Power MOSFET for High Frequency High Efficiency Power Electronics Applications Images |