FDC637BNZ N-Channel Enhancement Mode MOSFET for High Efficiency Power Electronics Applications

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Shenzhen Sai Collie Technology Co., Ltd.

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Name: FDC637BNZ NChannel Enhancement Mode MOSFET for High Efficiency Power Electronics Applications
Brand: onsemi
Price: 1 USD

Brand Name : onsemi

Model Number : FDC637BNZ

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

Drain to Source Voltage (Vdss) : 20 V

Current - Continuous Drain (Id) @ 25°C : 6.2A (Ta)

Rds On (Max) @ Id, Vgs : 24mOhm @ 6.2A, 4.5V

Vgs(th) (Max) @ Id : 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 12 nC @ 4.5 V

Vgs (Max) : ±12V

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Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	24mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	895 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SuperSOT™-6
Package / Case	SOT-23-6 Thin, TSOT-23-6

FDC637BNZ N-Channel Enhancement Mode MOSFET for High Efficiency Power Electronics Applications Images