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Brand Name : onsemi
Model Number : NTMTS0D7N06CTXG
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 60 V
Current - Continuous Drain (Id) @ 25°C : 60.5A (Ta), 464A (Tc)
Rds On (Max) @ Id, Vgs : 0.72mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 152 nC @ 10 V
Vgs (Max) : ±20V
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 0.72mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 11535 pF @ 30 V | |
FET Feature | - | |
Power Dissipation (Max) | 5W (Ta), 294.6W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-DFNW (8.3x8.4) | |
Package / Case |
Product Listing:
ON Semiconductor NTMTS0D7N06CTXG MOSFET Power Electronics
Features:
• Ultra-Low Gate Charge
• Fast Switching Capability
• RoHS Compliant
• Low On-Resistance
Specifications:
• Drain-Source Voltage (VDS): 60V
• Gate-Source Voltage (VGS): ±20V
• Drain Current (ID): 7A
• On-Resistance (RDS(on)): 0.006Ω
• Maximum Power Dissipation (PD): 5.3W
• Operating Junction Temperature (TJ): -55°C to 175°C
• Packaging: TO-252 (D-Pak)
• Packaging Format: Tape and Reel
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NTMTS0D7N06CTXG MOSFET Power Electronics - High Efficiency and High Reliability for Automotive Applications Images |