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Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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FDN358P MOSFET Power Electronics Single P-Channel Logic Level Trench

Shenzhen Sai Collie Technology Co., Ltd.
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FDN358P MOSFET Power Electronics Single P-Channel Logic Level Trench

Brand Name : onsemi

Model Number : FDN358P

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

Drain to Source Voltage (Vdss) : 30 V

Current - Continuous Drain (Id) @ 25°C : 1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 125mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id : 3V @ 250µA

Vgs (Max) : ±20V

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Single P-Channel (1.5 V) Specified PowerTrench® MOSFETSingle P-Channel (1.5 V) Specified PowerTrench® FDN358P MOSFET Power Electronics Single P-Channel Logic Level Trench

P-Channel 1.8V Specified PowerTrench MOSFET20 V, –0.83 A, 0.5 Ω
20 V, –0.83 A, 0.5 ΩSingle P-Channel (1.5 V) Specified PowerTrench® MOSFET

20 V, –0.83 A, 0.5

Product Status
Active
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
125mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
182 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
SOT-23-3
Package / Case
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
• –1.5 A, –30 V. RDS(ON) = 125 mΩ @ VGS = –10 V
RDS(ON) = 200 mΩ @ VGS = –4.5 V
• Low gate charge (4 nC typical)
• High performance trench technology for extremely
low RDS(ON) .
• High power version of industry Standard SOT-23
package. Identical pin-out to SOT-23 with 30%
higher power handling capability

Battery protection

Why buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.

How to buy >>>
• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.

Service >>>
• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.

FDN358P MOSFET Power Electronics Single P-Channel Logic Level Trench


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