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NDS355AN MOSFET Power Electronics N-Channel Logic Level Enhancement Mode Field Effect Transistor

Shenzhen Sai Collie Technology Co., Ltd.
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NDS355AN MOSFET Power Electronics N-Channel Logic Level Enhancement Mode Field Effect Transistor

Brand Name : onsemi

Model Number : NDS355AN

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

Drain to Source Voltage (Vdss) : 30 V

Current - Continuous Drain (Id) @ 25°C : 1.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 85mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id : 2V @ 250µA

Vgs (Max) : ±20V

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Single P-Channel (1.5 V) Specified PowerTrench® MOSFETSingle P-Channel (1.5 V) Specified PowerTrench® NDS355AN MOSFET Power Electronics N-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel 1.8V Specified PowerTrench MOSFET20 V, –0.83 A, 0.5 Ω
20 V, –0.83 A, 0.5 ΩSingle P-Channel (1.5 V) Specified PowerTrench® MOSFET

20 V, –0.83 A, 0.5

Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
85mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
195 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
SOT-23-3
Package / Case
SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast
switching, and low in-line power loss are needed in a very small outline surface mount package.© 1997 Fairchild Semiconductor Corporation.
Features:
1.7A, 30 V, RDS(ON) = 0.125 Ω @ VGS = 4.5 V
RDS(ON) = 0.085 Ω @ VGS = 10 V.
Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Compact industry standard SOT-23 surface mount.

Battery protection

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NDS355AN MOSFET Power Electronics N-Channel Logic Level Enhancement Mode Field Effect Transistor


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