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Brand Name : onsemi
Model Number : NDS355AN
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 30 V
Current - Continuous Drain (Id) @ 25°C : 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 85mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Vgs (Max) : ±20V
Single P-Channel (–1.5 V) Specified PowerTrench® MOSFETSingle P-Channel (–1.5 V) Specified PowerTrench® NDS355AN MOSFET Power Electronics N-Channel Logic Level Enhancement Mode Field Effect Transistor
P-Channel 1.8V Specified PowerTrench MOSFET–20 V, –0.83 A, 0.5 Ω
–20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET
–20 V, –0.83 A, 0.5
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 85mOhm @ 1.9A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 195 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 500mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SOT-23-3 | |
Package / Case |
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NDS355AN MOSFET Power Electronics N-Channel Logic Level Enhancement Mode Field Effect Transistor Images |