IRF6613TRPBF MOSFET Power Electronics
Product Description:
The IRF6613TRPBF is a N-Channel Enhancement Mode MOSFET Power Electronic device, designed for high frequency switching applications. This device offers low on-resistance and high current carrying capacity, making it an ideal choice for power management and conversion of high frequency circuits.
Features:
• Low On-Resistance
• High Current Carrying Capacity
• High Frequency Switching
• RoHS Compliant
Specifications:
• Polarity: N-Channel
• Voltage: 30V
• Drain to Source Voltage (Vdss): 30V
• Gate Threshold Voltage (Vgs): -4V
• Drain Current (Id): -6A
• Continuous Drain Current (Id): -6A
• Power Dissipation (Pd): 130W
• Transistor Case Style: TO-220AB
• No. of Pins: 3
• Operating Temperature Range: -55°C to +150°C
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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IRF6613TRPBF Mosfet In Power Electronics High Frequency Low On-Resistance Images
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