Product Listing:
IPB17N25S3100ATMA1 - N-Channel Enhancement Mode Field Effect Transistor
Specifications:
• Drain-Source Voltage (Vdss) : 100V
• Gate-Source Voltage (Vgss) : ± 20V
• Power Dissipation (Pd) : 4.3W
• Rds(on) : 0.087Ω
• Drain-Source On-State Resistance (Rdson) : 0.087Ω
• Operating Temperature Range : -55°C to 175°C
• Maximum Junction Temperature (Tj) : 175°C
• Mounting Style : SMD/SMT
• Package/Case : TO-252-3, DPak (2+Tab)
• Transistor Polarity : N-Channel
• Maximum Continuous Drain Current (Id) : 17A
• Transistor Type : MOSFET Power Electronics
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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Mosfet In Power Electronics IPB17N25S3100ATMA1 High Performance Switching Device Images
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